Qrd1114 Circuit Diagram

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Web buy onsemi qrd1114 in avnet apac. Web qre1113, qre1113gr, qre1114gr www.onsemi.com 2 electrical/optical characteristics (ta = 25°c unless otherwise noted) symbol parameter conditions. Web qrd1114 collector current if = 20 ma, vce = 5 v ic(on) 1 ——ma d =.050” (6,8) collector emitter if = 40 ma, ic = 100 µa vce (sat) ——0.4 v saturation voltage d =.

Web The Qrd1113/14 Reflective Sensor Consists Of An Infrared Emitting Diode And An Npn Silicon Photodarlington Mounted Side By Side In A Black Plastic Housing.


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Web The Qrd1113/14 Reflective Sensor Consists Of An Infrared Emitting Diode And An Npn Silicon Photodarlington Mounted Side By Side In A Black Plastic Housing.


Web qrd1114 on semiconductor similar functions the functional characteristics of the device are consistent, but the main parameters are inconsistent, and the circuit. Optical switches, reflective, with phototransistor output photo trans Web description the qrd1113/14 reflective sensor consists of an infrared emitting diode and an npn silicon phototransistor mounted side by side in a black plastic housing.